Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells
نویسندگان
چکیده
We have analyzed the temperature and intensity dependence of open-circuit voltage InGaN/GaN multi-quantum well solar cells up to 725 K more than 1000 suns. show that simple ABC model routinely used analyze measured quantum efficiency data LEDs can accurately reproduce if a temperature-dependent Shockley-Read-Hall lifetime is device heating taken into account.
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ژورنال
عنوان ژورنال: Solar Energy Materials and Solar Cells
سال: 2021
ISSN: ['0927-0248', '1879-3398']
DOI: https://doi.org/10.1016/j.solmat.2021.111253